摘要

This report addresses the strategic issues impacting both the user and supplier of plasma etching equipment to the semiconductor industry. Markets for dry etching and stripping are analyzed and projected.

本报告分析了等离子腐蚀设备购买者和供应商的相关战略问题，干法刻蚀和剥离技术在报告中也有详细介绍。

目录及图表

Chapter 1  Introduction 1-1
    
1.1  The Need For This Report  1-1
    
Chapter 2  Executive Summary 2-1
    
2.1  Summary of Technical Issues  2-1
2.2  Summary of User Issues  2-2
2.3  Summary of Supplier Issues  2-3
2.4 Summary of Market Forecasts 2-4
    
Chapter 3  Technical Issues and Trends  3-1
    
3.1  Introduction  3-1
3.2  Processing Issues  3-14
3.2.1  Chlorine Versus Fluorine Processes  3-19
3.2.2  Multilevel Structures  3-32
3.2.3  New Materials  3-39
3.2.4  GaAs Processing  3-46
3.3 Plasma Stripping 3-47
3.3.1 Photoresist Stripping 3-47
3.3.2 Low-K Removal 3-68
3.4  Safety Issues  3-70
3.4.1  System Design Considerations  3-70
3.4.2  Gas Handling  3-71
3.4.3  Reactor Cleaning  3-73
    
Chapter 4  Market Forecast  4-1
    
4.1  Influence of Technology Trends on the Equipment Market  4-1
4.2  Market Forecast Assumptions  4-5
4.3  Market Forecast  4-6
    
Chapter 5  Strategic Issues: Users 5-1
    
5.1  Evaluating User Needs  5-1
5.1.1  Device Architecture  5-1
5.1.2  Wafer Starts and Throughput Requirements 5-6
5.1.3  Wafer Size  5-7
5.2  Benchmarking a Vendor  5-8
5.2.1  Pricing  5-8
5.2.2  Vendor Commitment and Attitudes  5-10
5.2.3  Vendor Capabilities  5-12
5.2.4  System Capabilities  5-14
5.3  Cost Analysis  5-17
5.3.1  Equipment Price  5-17
5.3.2  Installation Costs  5-20
5.3.3  Maintenance Costs  5-21
5.3.4  Sustaining Costs  5-22
5.3.5  Hidden Costs  5-22
5.4  User - Supplier Synergy  5-23
5.4.1  Feedback During Equipment Evaluation  5-23
5.4.2  Feedback During Device Production  5-25
    
Chapter 6  Strategic Issues: Suppliers 6-1
    
6.1  Competition  6-1
6.2  Customer Interaction  6-3
6.2.1  Customer Support  6-3
6.2.2   Cleanroom Needs in the Applications Lab  6-6
6.3  Equipment Compatibility in Class 1 Cleanrooms  6-7
6.3.1  Footprint Versus Serviceability  6-7
6.3.2  Particulate Generation  6-7
6.3.3  Automation  6-17
6.3.4  300-mm Tools 6-20
    
  FIGURES 
    
3.1 Various Enhanced Designs (a) Helicon, (b) Multiple ECR, (c) Helical Resonator 3-4
3.2 Schematic of Inductively Coupled Plasma Source 3-6
3.3 Schematic of the HRe Source 3-9
3.4 Schematic of the Dipole Magnet Source 3-10
3.5 Schematic of Chemical Downstream Etch 3-11
3.6  Silicon Trench Structure   3-21
3.7 Dual Damascene Dielectric Etch Approaches 3-35
4.1  Trends in Minimum Feature Size for Dynamic RAMS 4-4
4.2  Market Shares for Dry Etch Equipment 4-7
4.3  Market Shares for Strip Equipment 4-10
4.4 Distribution of Etch Sales by Type 4-14
4.5 Distribution of Etch Sales by Device 4-17
4.6  Geographical Distribution of Equipment Purchases 4-19
5.1  Typical First Year Single Wafer System Cost Analysis 5-17
6.1 Relationship Between Device Yield and Particles 6-9
6.2 Sources of Particles 6-12
6.3 Relationship Between Die Yield and Chip Size 6-16
    
  TABLES 
    
3.1  Silicon Wafer Usage 3-2
3.2 Plasma Source Comparison 3-12
3.3 Typical Process Specifications 3-18
3.4 Dry Resist Stripping Systems 3-51
4.1 Worldwide Dry Etch Market Shares 4-8
4.2 Worldwide Dry Strip Market Shares 4-11
4.3  Worldwide Market Forecast of Plasma Etching Systems 4-12
4.4 Distribution of Etch Sales by Device by Vendor 4-16
4.5 Number of Layers To Be Etched 4-20
4.6 Distribution of Wafer Starts 4-21
4.7 Feature Sizes of Equipment Capabilities  4-22
5.1 Overall Roadmap of Technology Characteristics 5-3
5.2 Levels of Integration of Dynamic Rams 5-5
5.3 Interconnect Levels of Logic Devices 5-6
6.1 0.18µm Etch Process Specifications 6-22